| PART |
Description |
Maker |
| RJK03E4DPA RJK03E4DPA13 RJK03E4DPA-00-J5A |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N0DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N6DPA |
30V, 40A, 3.8m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| CPH583507 CPH5835 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| CPH5826 |
Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| D10SBS4 |
Schottky Rectifiers (SBD) / SBD Bridges
|
Shindengen
|
| FRH20A15 |
SBD DUAL DIODES - ANODE COMMON
|
NIEC[Nihon Inter Electronics Corporation]
ETC
|
| TW8810D |
TFT Flat Panel Controller with Built-in 3D Video Decoder, Triple ADCs, Dual View and Dual PIP Support
|
Renesas Electronics Corporation
|
| FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
| SC16IS752IBS157 |
Dual UART with I2C-bus/SPI interface, 64 bytes of transmit and receive FIFOs, IrDA SIR built-in support; Package: SOT617-1 (HVQFN32); Container: Tray Pack, Bakeable, Multiple 2 CHANNEL(S), 5M bps, SERIAL COMM CONTROLLER, PQCC32
|
NXP Semiconductors N.V.
|
